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| DTA114E SERIES Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO-92 package which is designed for through hole applications. http://onsemi.com Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C (1.) Derate above 25C Symbol VCBO VCEO IC PD 350 2.81 mW mW/C Value 50 50 100 Unit Vdc Vdc mAdc 2 BASE COLLECTOR 3 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RJA TJ, Tstg TL 260 10 Value 357 -55 to +150 Unit C/W C 1 2 3 C Sec DEVICE MARKING AND RESISTOR VALUES Device DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z Marking DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 Shipping 5000/Box CASE 29 TO-92 (TO-226) STYLE 1 Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (c) Semiconductor Components Industries, LLC, 2000 1 May, 2000 - Rev. 0 Publication Order Number: DTA114E/D DTA114E SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z ICBO ICEO IEBO -- -- -- -- -- -- -- -- -- -- -- -- 50 50 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 -- -- nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z hFE 35 60 80 80 160 160 3.0 8.0 15 80 -- 60 100 140 140 250 250 5.0 15 27 140 -- -- -- -- -- -- -- -- -- -- -- 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y (IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E (IC = 10 mA, IB = 5 mA) DTA123E (IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/ (IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) DTA114E DTA124E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA144E VCE(sat) VOL -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 2 DTA114E SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTA114T DTA113T DTA144E DTA114Y DTA143Z DTB113E DTA114T DTA143T DTA123E DTA143E DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA114E/DTA124E/DTA144E DTA114Y DTA114T/DTA143T DTB113E/DTA123E/DTA143E DTA143Z R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 0.8 0.17 -- 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 1.0 0.21 -- 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 1.2 0.25 -- 1.2 0.185 k Symbol VOH Min 4.9 Typ -- Max -- Unit Vdc (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Input Resistor Resistor Ratio R1/R2 http://onsemi.com 3 DTA114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTA114E 250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 75C 0.1 200 25C 150 100 RJA = 625C/W 50 0 -50 0 50 100 150 0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA) TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve Figure 2. VCE(sat) versus IC 1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V 4 f = 1 MHz lE = 0 V TA = 25C TA = 75C 100 25C -25C Cob , CAPACITANCE (pF) 100 3 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain Figure 4. Output Capacitance 100 75C IC , COLLECTOR CURRENT (mA) 10 25C TA = -25C 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 1 0.1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current http://onsemi.com 4 DTA114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTA124E VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = -25C 25C 1 75C h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 100 -25C 0.1 0.01 10 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 VO = 5 V 1 0.01 0 1 2 3 4 5 6 7 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 5 DTA114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTA144E VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75C 25C -25C 100 TA = -25C 75C 0.1 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C 25C -25C 0.8 Cob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 2 V Vin , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 DTA114E SERIES TYPICAL ELECTRICAL CHARACTERISTICS DTA114Y VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 -25C VCE = 10 V 25C TA = 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) -25C 25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 +12 V Typical Application for PNP BRTs LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 7 DTA114E SERIES PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 Thermal Clad is a trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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